DMP58D0SV document number: ds31293 rev. 4 - 2 1 of 5 www.diodes.com july 2009 ? diodes incorporated DMP58D0SV dual p-channel enhancement mode field effect transistor features ? low on-resistance ? esd protected gate to 500v ? low input capacitance ? fast switching speed ? lead free by design/rohs compliant (note 3) ? ?green? device (note 4) ? qualified to aec-q 101 standards for high reliability mechanical data ? case: sot-563 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.006 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -50 v drain-gate voltage (note 1) v dgr -50 v gate-source voltage continuous v gss 20 v drain current (note 2) continuous i d -160 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 2) p d 400 mw thermal resistance, junction to ambient (note 2) r ja 313 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -50 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1 a v ds = -50v, v gs = 0v gate-body leakage i gss ? ? 5 a v gs = 20v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) -0.8 ? -2.1 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds ( on ) ? 6 8 v gs = -5v, i d = -0.100a forward transconductance g fs 0.05 ? ? s v ds = -25v, i d = -0.1a dynamic characteristics input capacitance c iss ? 27 ? pf v ds = -25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 4 ? pf reverse transfer capacitance c rss ? 1.4 ? pf notes: 1. r gs 20k . 2. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout docum ent ap02001, which can be found on our website at http://www.diodes.com/ datasheets/ap02001.pdf. 3. no purposefully added lead. 4. diodes inc?s ?green? policy can be found on our w ebsite at http://www.diodes.com /products/lead_free/index.php. 5. short duration pulse test used to minimize self-heating effect. sot-563 top view internal schematic top view s 1 d 1 d 2 s 2 g 1 g 2 esd protected to 500v
DMP58D0SV document number: ds31293 rev. 4 - 2 2 of 5 www.diodes.com july 2009 ? diodes incorporated DMP58D0SV fig. 1 typical output characteristics 0.00 0.10 0.20 0.30 0.40 0.50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v , drain-source voltage (v) ds -i , d r ai n c u r r e n t (a) d v = -1.8v gs v = -2.5v gs v = -4.5v gs v = -10v gs fig. 2 typical transfer characteristics 0 0.1 0.2 0.3 0.4 1 1.5 2 2.5 3 3.5 4 4.5 -v , gate source voltage (v) gs -i , d r ain c u r r en t (a) d v = -5v gs t = -55c a t = 25c a t = 85c a t = 150c a fig. 3 typical on-resistance vs. drain current and gate voltage 1 10 0.001 0.01 v= -5v gs 0.1 1 -i , drain current (a) d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = -10v gs -i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 1 10 100 0 0.05 0.1 0.15 0.2 0.25 0.3 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 5 on-resistance variation with temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-to-source resistance (normalized) ds(on) v = -5v i = -100ma gs d v = -10v i = -250ma gs d fig. 6 typical capacitance 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 -v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) f = 1mhz v = 0v gs c iss c oss c rss
DMP58D0SV document number: ds31293 rev. 4 - 2 3 of 5 www.diodes.com july 2009 ? diodes incorporated DMP58D0SV fig. 7 gate threshold variation vs. ambient temperature 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50-25 0 25 50 75100125150 t , ambient temperature (c) a -v , gate threshold voltage (v) gs(th) i = -250a d 0.001 0.01 0.1 1 0.2 0.4 0.6 0.8 1 1.2 -v , source-drain voltage (v) sd -i , s o u r c e c u r r en t (a) s fig. 8 diode forward voltage vs. current t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 0v gs fig. 9 transient thermal response 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , pulse duration time (s) 1 r(t), t r ansient the r mal r esistan c e d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * r r = 313c/w ? ja ja ja p(pk) t 1 t 2 ordering information (note 6) part number case packaging DMP58D0SV -7 sot-563 3000/tape & reel notes: 6. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information (note 7) date code key year 2007 2008 2009 2010 2011 2012 2013 2014 2015 code u v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d notes: 7. package is non-polarized. parts may be on r eel in orientation illustrated, 180 rotated, or mixed (both ways) . mpa = product type marking code ym = date code marking y = year (ex: u = 2007) m = month (ex: 9 = september) mpa ym
DMP58D0SV document number: ds31293 rev. 4 - 2 4 of 5 www.diodes.com july 2009 ? diodes incorporated DMP58D0SV package outline dimensions suggested pad layout sot-563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
DMP58D0SV document number: ds31293 rev. 4 - 2 5 of 5 www.diodes.com july 2009 ? diodes incorporated DMP58D0SV important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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